Members

Biographical Info

• 2010 Máster Universitario en Formación del Profesorado de ESO y Bachillerato, FP y Enseñanzas de Idiomas.
• 2009 PhD at the UAM.
• 2005 Physics degree at the UAM.

Honors and Awards

Research Interests

• First-principles Molecular Dynamics.
• Simulation of reactions in biomolecules.
• Dynamical, atomic and electronic properties of semiconductor surface.

Relevant/Recent Publications

1. Quantum Mechanics/Molecular Mechanics Free Energy Maps and Nonadiabatic Simulations for a Photochemical Reaction in DNA: Cyclobutane Thymine Dimer, Jesús I. Mendieta-Moreno, Daniel G. Trabada, Jesús Mendieta, James P. Lewis, Paulino Gómez-Puertas, and José Ortega, J. Phys. Chem. Lett., 7 (21), pp 4391–4397, (2016). [URL]
2. Ultrafast Atomic Diffusion Inducing a Reversible (2√3×2√3)R30°↔(√3×√3)R30° Transition on Sn/Si(111)∶B, W. Srour, Daniel G. Trabada, J. I. Martínez, F. Flores, J. Ortega, M. Abuín, Y. Fagot-Revurat, B. Kierren, A. Taleb-Ibrahimi, D. Malterre, and A. Tejeda, Phys. Rev. Lett. 114, 196101, (2015). [URL]
3. Giant alkali-metal-induced lattice relaxation as the driving force of the insulating phase of alkali-metal/Si(111):B, L. Chaput, C. Tournier-Colletta, L. Cardenas, A. Tejeda, B. Kierren, D. Malterre, Y. Fagot-Revurat, P. Le Fèvre, F. Bertran, A. Taleb-Ibrahimi, D. G. Trabada, J. Ortega, and F. Flores, Phys. Rev. Lett. 107, 187603, (2011). [URL]
4. Advances and applications in the FIREBALLab initio tight-binding molecular-dynamics formalism, Lewis, J. P., Jelínek, P., Ortega, J., Demkov, A. A., Trabada, D. G., Haycock, B., Wang, H., Adams, G., Tomfohr, J. K., Abad, E., Wang, H. and Drabold, D. A., Phys. Status Solidi B, 248: 1989–2007, (2011). [URL]
5. Hydrogenation of semiconductor surfaces: Si-terminated cubic SiC(100) surfaces, Daniel G. Trabada, Fernando Flores, and José Ortega, Phys. Rev. B 80, 075307, (2009). [URL]
6. Weak dimers and soft phonons on the β-SiC(100) surface, Daniel G Trabada and José Ortega, Journal of Physics: Condensed Matter, 21(18), (2009). [URL]