Quantum control of spin qubits in Silicon

Wednesday, 27 January 2010, 12:00-13.00

Dr. Maria Jose Calderon

Department of theory and simulation of materials.
Instituto de Ciencia de Materiales de Madrid (CSIC)

ABSTRACT:

Doped Si is a promising candidate for quantum computing [1] due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades.
This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. I will address several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields [2-4]. In particular, I will discuss the effect of the conduction band degeneracy in Si on this manipulation [3] and how this degeneracy may be lifted at an interface with an insulator [5].

[1] B. Kane, Nature 393, 133 (1998)
[2] M.J. Calderón, B. Koiller, X. Hu and S. Das Sarma, Phys. Rev. Lett. 96, 096802 (2006).
[3] M.J. Calderón, B. Koiller, and S. Das Sarma, Phys. Rev. B 77, 155302 (2008).
[4] M.J. Calderón, A. Saraiva, B. Koiller and S. Das Sarma, Journal of Applied Physics 105, 122410 (2009) [5] A.L. Saraiva, M.J. Calderón, X. Hu, S. Das Sarma, and B. Koiller, Phys. Rev. B 80, 081305 (2009).