Quantum control of spin qubits in Silicon
Wednesday, 27 January 2010, 12:00-13.00
Dr. Maria Jose Calderon
Department of theory and simulation of materials.
Instituto de Ciencia de Materiales de Madrid (CSIC)
Doped Si is a promising candidate for quantum computing  due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades.
This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. I will address several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields [2-4]. In particular, I will discuss the effect of the conduction band degeneracy in Si on this manipulation  and how this degeneracy may be lifted at an interface with an insulator .
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 M.J. Calderón, B. Koiller, X. Hu and S. Das Sarma, Phys. Rev. Lett. 96, 096802 (2006).
 M.J. Calderón, B. Koiller, and S. Das Sarma, Phys. Rev. B 77, 155302 (2008).
 M.J. Calderón, A. Saraiva, B. Koiller and S. Das Sarma, Journal of Applied Physics 105, 122410 (2009)  A.L. Saraiva, M.J. Calderón, X. Hu, S. Das Sarma, and B. Koiller, Phys. Rev. B 80, 081305 (2009).